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TTC004B - NPN Transistor

Features

  • (1) High collector voltage: VCEO = 160 V (min) (2) Complementary to TTA004B (3) Small collector output capacitance: Cob = 12 pF (typ. ) (4) High transition frequency: fT = 100 MHz (typ. ) 3. Packaging and Internal Circuit (Note) TTC004B 1. Emitter 2. Collector 3. Base TO-126N Note: Although this device is encapsulated in epoxy resin, it does not provide any guarantee to the maximum isolation voltage. Therefore, as with the case with non-isolated devices, care should be taken with regard to elect.

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    Bipolar Transistors Silicon NPN Epitaxial Type TTC004B 1. Applications • Audio-Frequency Amplifiers 2. Features (1) High collector voltage: VCEO = 160 V (min) (2) Complementary to TTA004B (3) Small collector output capacitance: Cob = 12 pF (typ.) (4) High transition frequency: fT = 100 MHz (typ.) 3. Packaging and Internal Circuit (Note) TTC004B 1. Emitter 2. Collector 3. Base TO-126N Note: Although this device is encapsulated in epoxy resin, it does not provide any guarantee to the maximum isolation voltage. Therefore, as with the case with non-isolated devices, care should be taken with regard to electrical isolation from surrounding parts. ©2018 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2013-05 2018-02-23 Rev.2.0 TTC004B 4.
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