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Bipolar Transistors Silicon NPN Epitaxial Type
TTC004B
1. Applications
• Audio-Frequency Amplifiers
2. Features
(1) High collector voltage: VCEO = 160 V (min) (2) Complementary to TTA004B (3) Small collector output capacitance: Cob = 12 pF (typ.) (4) High transition frequency: fT = 100 MHz (typ.)
3. Packaging and Internal Circuit (Note)
TTC004B
1. Emitter 2. Collector 3. Base
TO-126N
Note: Although this device is encapsulated in epoxy resin, it does not provide any guarantee to the maximum isolation voltage. Therefore, as with the case with non-isolated devices, care should be taken with regard to electrical isolation from surrounding parts.
©2018 Toshiba Electronic Devices & Storage Corporation
1
Start of commercial production
2013-05
2018-02-23 Rev.2.0
TTC004B
4.
TTC004B Datasheet
