TVR1B
TVR1B,TVR1G,TVR1J
TOSHIBA Fast Recovery Diode Silicon Diffused Type
TVR1B,TVR1G,TVR1J
TV Applications (fast recovery)
Unit: mm Average Forward Current: IF (AV) = 0.5 A (Ta = 65°C) Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V Reverse Recovery Time: trr = 2.0 µs
- -
- Maximum Ratings (Ta = 25°C)
Characteristics TVR1B Repetitive peak reverse voltage TVR1G TVR1J Average forward current (Ta = 65°C) Peak one cycle surge forward current (non repetitive) Junction temperature Storage temperature range IF (AV) IFSM Tj Tstg VRRM Symbol Rating 100 400 600 0.5 10 (50 Hz) -40~125 -40~125 A A °C °C V Unit
JEDEC JEITA TOSHIBA
― ― 3-3C1A
Electrical Characteristics (Ta = 25°C)
Characteristics Peak forward voltage Repetitive peak reverse current Reverse recovery time Symbol VFM IRRM trr (1) trr (2) Test Condition IFM = 0.5 A VRRM = Rated IF = 20 m A, IR = 1 m A IF = 100 m A, IR = 100 m A
Weight: 0.3 g (typ.)
Min ¾ ¾ ¾ ¾
Typ. ¾ ¾ ¾ 0.3
Max 1.2 10 2.0 ¾
Unit V m A ms
Marking
Type Code Lot No. Color: Silver Month of manufacture Year of manufacture Cathode Mark January to December are denoted by letter A to L respectively. Last decimal digit of the year of manufacture VR 1J Code VR1B VR1G VR1J Type TVR1B TVR1G TVR1J
2002-09-18
TVR1B,TVR1G,TVR1J i F
- v F
20 10 5 3 125°C 200
Ta max
- IF (AV)
Maximum allowable ambient temperature Ta max (°C)
(A)
Instantaneous on-state current i F
120 Resistive and inductive load 80 Capacitive load 40
1 0.5 0.3
Tj = 25°C
0.1...
