USF5G49 Datasheet | Toshiba

.. SF5G49,SF5J49,USF5G49,USF5J49 TOSHIBA Thyristor Silicon Planar Type SF5G49,SF5J49,USF5G49,USF5J49 Medium Power Control Applications - - - Repetitive peak off-state voltage: VDRM = 400, 600 V Repetitive peak reverse voltage: VRRM = 400, 600 V Average on-state current: IT (AV) = 5 A Gate trigger current: IGT = 70 µA max Unit: mm Maximum Ratings Characteristics Repetitive peak off-state voltage and Repetitive peak reverse voltage (RGK = 330 W) Non-repetitive peak reverse voltage (non-repetitive < 5 ms, Tj = 0~125°C, RGK = 330 W) Average on-state current R.M.S on-state current Peak one cycle surge on-state current (non-repetitive) I2t limit value Peak gate power dissipation Average gate power dissipation Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Junction temperature Storage temperature range SF5G49 USF5G49 SF5J49 USF5J49 SF5G49 USF5G49 SF5J49 USF5J49 Symbol Rating 400 V 600 500 VRSM 720 IT (AV) IT (RMS) ITSM I2t PGM PG (AV) VFGM VRGM IGM Tj Tstg 5 7.8 65 (50 Hz) 20 0.5 0.05 5 -5 200 -40~125 -40~125 A A A A2s W W V V m A °C °C V Unit VDRM VRRM JEDEC JEITA TOSHIBA ― ― 13-7F1A Weight: 0.36 g (typ.) Note: Should be used with gate resistance as follows: Anode Gate RGK < = 330 W Cathode JEDEC JEITA TOSHIBA ― ― 13-F2A Weight: 0.28 g (typ.) 2002-02-05 .. SF5G49,SF5J49,USF5G49,USF5J49 Electrical Characteristics (Ta = 25°C) Characteristics Repetitive peak off-state current and Repetitive peak reverse current Peak on-state voltage Gate trigger voltage Gate trigger current Gate non-trigger voltage Critical rate of rise of off-state voltage Holding current Thermal resistance (junction to case) Symbol IDRM IRRM VTM VGT IGT VGD dv/dt IH Rth (j-c) Test Condition VDRM = VRRM = Rated RGK = 330 W ITM = 12 A VD = 6 V, RL = 100 W RGK = 330 W VD = Rated ´ 2/3, Tc = 125°C VDRM = Rated ´ 2/3, Tc = 75°C RGK = 330 W, Exponential rise RL = 100 W, RGK = 330 W DC Min ¾ ¾ ¾ 3 0.2 ¾ ¾ ¾ Typ. ¾ ¾ ¾ ¾ ¾ 50 2.5 ¾ Max 20 1.6 0.8 70 ¾ ¾ ¾ 6.0...