Toshiba 015AZ3.0
Silicon Diode
| Part No. | 015AZ3.0 |
|---|---|
| Datasheet | 015AZ3.0 Download |
| Manufacturer |  Toshiba |
| Description | Silicon Diode |
| Buy | Stock & Price |
APPLICATIONS
Unit: mm l Small package l Nominal voltage tolerance about ±2.5% (2.0V~12V)MAXIMUM RATINGS
(Ta = 25°C) Characteristics Symbol Rating Power dissipation P* 150 Junction temperature Tj 125 Storage temperature range Tstg -55~125 * Mounted on a glass epoxy circuit board of 20 × 20mm, Pad dimension of 4 × 4mm. Unit mW °C °CELECTRICAL CHARACTERISTICS
(See Page 2~3) JEDEC JEITA TOSHIBA Weight: 1.4 mg ― ― 1-1G1A Marking Example 1: 015AZ12-× Example 2: 015AZ12-× Pin Assignment (top view) 1 2001-10-30 015AZ2.0~015AZ12ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Zener Voltage Dynamic Impedance Knee Dynamic Impedance Reverse Current Type No. * VZ (V) Min Max IZ (mA) ZZ(Ω) Max 015AZ2.0 ** X Z 015AZ2.2 ** X Z 015AZ2.4 X Z 015AZ2.7 X Z 015AZ3.0 X Z 015AZ3.3 X Z 015AZ3.6 X Z 015AZ3.9 X Z X 015AZ4.3 Y Z X 015AZ4.7 Y Z X 015AZ5.1 Y Z X 015AZ5.6 Y Z X 015AZ6.2 Y Z X 015AZ6.8 Y Z * : Test time: t = 30ms ** : Product by order. 1.85 1.95 2.05 2.16 2.28 2.40 2.50 2.65 2.80 2.95 3.10 3.25 3.40 3.55 3...
