15J331 - Silicon N-Channel IGBT

Toshiba

Datasheet Details

Part number	15J331
Manufacturer	Toshiba
File Size	219.13 KB
Description	Silicon N-Channel IGBT
Datasheet	15J331 Datasheet
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GT15J331 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J331 High-Power Switching Applications Motor Control Applications • Fourth-generation IGBT • Enhancement mode type • High speed: tf = 0.10 μs (typ.) • Low saturation voltage: VCE (sat) = 1.75 V (typ.) • FRD included between emitter and collector Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-emitter voltage Gate-emitter voltage Collector current Emitter-collector forward current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range DC 1 ms DC 1 ms VCES VGES IC ICP IF IFM PC Tj Tstg 600 V ±20 V 15 A 30 15 A 30 A 70 W 150 °C −55 to 150 °C Note: Using continuously under heavy loads (e.g.

Published: Nov 21, 2018 |