Toshiba 1SS154
Silicon Epitaxial Schottky Barrier Type Diode
| Part No. | 1SS154 |
|---|---|
| Datasheet | 1SS154 Download |
| Manufacturer |  Toshiba |
| Description | Silicon Epitaxial Schottky Barrier Type Diode |
| Buy | Stock & Price |
APPLICATIONS
● Small package.ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Forward current Junction temperature Storage temperature range VR 6 V IF 30 mA Tj 125 °C Tstg −30 to 125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Characteristics Reverse voltage Reverse current Forward voltage Forward voltage Total capacitance Symbol VR IR VF (1) VF (2) CT Test Con...
