Toshiba 1SS187
Silicon Epitaxial Planar Type Diode
| Part No. | 1SS187 |
|---|---|
| Datasheet | 1SS187 Download |
| Manufacturer |  Toshiba |
| Description | Silicon Epitaxial Planar Type Diode |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 300 mA Average forward current IO 100 mA Surge current (10ms) IFSM 2 A Power dissipation PD (Note 2, 4) 200 mW PD (Note 3) 150 Junction temperature Tj (Note 2) 150 °C Tj (Note 3) 125 Storage temperature Tstg (Note 2) −55 to 150 °C Tstg (Note 3) −55 to 125 JEDEC TO-236MOD JEITA SC-59 TOSHIBA 2-3F1S Weight: 12 mg (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
