Toshiba 1SS360F
Silicon Epitaxial Planar Type Diode
| Part No. | 1SS360F |
|---|---|
| Datasheet | 1SS360F Download |
| Manufacturer |  Toshiba |
| Description | Silicon Epitaxial Planar Type Diode |
| Buy | Stock & Price |
APPLICATIONS
1SS360F Unit in mm l Small package : 1608 Flat lead l Excellent in forward current and forward voltage characteristics : VF (3) = 0.92V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = 2.2pF (typ.)MAXIMUM RATINGS
(Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation VRM VR IFM IO IFSM P 85 80 300 (*) 100 (*) 2 (*) 100 Junction temperature Tj 125 Storage temperature range Tstg −55~125 (*) Unit rating. Total rating = unit rating × 1.5ELECTRICAL CHARACTERISTICS
(Ta = 25°C) V V mA mA A mW °C °C JEDEC ― EIAJ TOSHIBA ― 1-2SA1A Weigh: 2.3 mg Characteristic Forward voltage Reverse current Total capacitance Reverse recovery time Symbol VF (1) VF (2) VF (3) IR (1) IR (2) CT trr Test Circuit Test Condition ― IF = 1mA ― IF = 10mA ― IF = 100mA ― VR = 30V ― VR = 80V ― VR = 0, f = 1MHz ― IF = 10mA (Fig.1) Min Typ.
