1SS361CT Datasheet | Toshiba

TOSHIBA Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application z Small package z Low forward voltage: VF (3) = 0.9 V (typ.) z Fast reverse recovery time: trr = 1.6 ns (typ.) z Small total capacitance: CT = 0.9 p F (typ.) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Maximum (peak) reverse Voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation VRM VR IFM IO IFSM P 85 80 300- 100- 2- 100- - Junction temperature Storage temperature Tj Tstg - 55 to 150 - : Unit rating. Total rating = Unit rating × 1.5 - - : Mounted on FR4 board (10 mm × 10 mm × 1 mm (t)) Unit TOP VIEW m A m A CST3 m W 1.Anode1 2.Anode2 3.Cathode °C °C JEDEC ― JEITA ― TOSHIBA 1-1S1S Weight: 0.75 mg (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/ voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage Reverse current Total capacitance Reverse recovery...