1SS361FV
1SS361FV is Silicon Epitaxial Planar Type Diode manufactured by Toshiba.
0.5± 0. 1
TOSHIBA Diode Silicon Epitaxial Planar Type
Ultra-High-Speed Switching Applications
- AEC-Q101 qualified (Note 1)
- Small package
- Excellent in forward current and forward voltage characteristics
: VF (3) = 0.9 V (typ.)
- Fast reverse recovery time : trr = 1.6 ns (typ.)
- Small total capacitance : CT = 0.9 p F (typ.)
Note1: For detail information, please contact our sales.
1.2±0.05 0.8±0.05 0.4 0.4
0.22±0.05
Unit: mm
1.2±0.05 0.8±0.05
0.32±0.05
0.13±0.05
0.5±0.05
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10 ms) Power dissipation Junction temperature Storage temperature range
VRM VR IFM IO IFSM P Tj Tstg
- m A
- m A
VESM
1. ANODE 1 2. ANODE2 3. CATHODE
2-
JEDEC
―
- - m...
