1SS387CT Datasheet | Toshiba

Features (1) Small package (2) Low forward voltage: VF(3) = 0.98 V (typ.) (3) Fast reverse recovery time: trr = 1.6 ns (typ.) (4) Small total capacitance: Ct = 0.5 p F (typ.) 3. Packaging and Internal Circuit CST2 1: Cathode 2: Anode Start of mercial production 2004-08 2014-04-04 Rev.3.0 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Peak reverse voltage Reverse voltage Peak forward current 200 m A Average rectified current Non-repetitive peak forward surge current IFSM Power dissipation PD (Note 1) 150 m W Junction temperature Tj  Storage temperature Tstg -55 to 150  Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on a glass epoxy circuit board of 20 mm × 20 mm, Pad dimension of 4 mm × 4...