Toshiba 1SS397
Silicon Epitaxial Planar Type Diode
| Part No. | 1SS397 |
|---|---|
| Datasheet | 1SS397 Download |
| Manufacturer |  Toshiba |
| Description | Silicon Epitaxial Planar Type Diode |
| Buy | Stock & Price |
APPLICATIONS
1SS397 Unit: mm● Small package : SC-70
● Low forward voltage : VF = 1.0 V (typ.)
● High voltage : VR = 400 V (min)
● Fast reverse recovery time : trr = 0.5 μs (typ.)
● Small total capacitance : CT = 2.5 pF (typ.)
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 420 V Reverse voltage VR 400 V Maximum (peak) forward current IFM 300 mA Average forward current IO 100 mA Surge current (10ms) IFSM 2 A Power dissipation PD (Note 1, 3) 200 mW PD (Note 2) 100 Junction temperature Tj (Note 1) 150 °C Tj (Note 2) 125 Storage temperature range Tstg (Note 1) −55 to 150 °C Tstg (Note 2) −55 to 125 JEDEC ― JEITA SC-70 TOSHIBA 1-2P1D Weight: 0.006g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
