Datasheet Summary
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
High Speed Switching Application
Unit: mm
CATHODE MARK 1.0±0.05 0.25±0.03 0.25±0.03
0.65 0.05±0.03
- Small package
- Low forward voltage: VF (3) = 0.56 V (typ.)
- Low reverse current: IR = 5 μA...
