| Part number | 1SS417CT |
|---|---|
| Download | 1SS417CT Datasheet (PDF) |
| File Size | 189.50 KB |
| Manufacturer | Toshiba |
| Description | Silicon Epitaxial Schottky Barrier Type Diode |
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| Manufacturer | Part Number | Description |
|---|---|---|
PanJit Semiconductor |
1SS417FN2 | SURFACE MOUNT SCHOTTKY BARRIER |
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PanJit Semiconductor |
1SS417TM | HIGH SPEED SWITCHING DIODE |
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS417CT 1SS417CT High Speed Switching Application Unit: mm CATHODE MARK 1.0±0.05 0.25±0.03 0.25±0.03 0.65 0.05±0.03 Small package Low forward voltage: VF (3) = 0.56 V (typ.) Low reverse current:.
