| Part number | 1SS417CT |
|---|---|
| Datasheet | 1SS417CT-Toshiba.pdf |
| File Size | 189.50 KB |
| Manufacturer | Toshiba |
| Description | Silicon Epitaxial Schottky Barrier Type Diode |
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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS417CT 1SS417CT High Speed Switching Application Unit: mm CATHODE MARK 1.0±0.05 0.25±0.03 0.25±0.03 0.65 0.05±0.03 Small package Low forward voltage: VF (3) = 0.56 V (typ.) Low reverse current:.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
1SS417FN2 | SURFACE MOUNT SCHOTTKY BARRIER | Pan Jit International |
|
1SS417TM | HIGH SPEED SWITCHING DIODE | Pan Jit International |
| Part Number | Description |
|---|---|
| 1SS417 | Schottky Barrier Diode |
| 1SS412 | Silicon Diode |
| 1SS413 | Schottky Barrier Diode |
| 1SS413CT | Schottky Barrier Diode |
| 1SS416 | Schottky Barrier Diode |
| 1SS416CT | Silicon Epitaxial Schottky Barrier Type Diode |
| 1SS418 | Silicon Diode |
| 1SS419 | Silicon Diode |
| 1SS403E | Silicon Epitaxial Planar Switching Diodes |
| 1SS405 | Schottky Barrier Diode |
