The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS417CT
1SS417CT
High Speed Switching Application
Unit: mm
CATHODE MARK 1.0±0.05 0.25±0.03 0.25±0.03
0.65 0.05±0.03
• Small package • Low forward voltage: VF (3) = 0.56 V (typ.) • Low reverse current: IR = 5 μA (max)
0.6±0.05
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation Junction temperature Storage temperature range Operating temperature range
VRM VR IFM IO IFSM P* Tj Tstg Topr
45
V
40
V
200
mA
100
mA
1
A
100
mW
125
°C
−55 to 125
°C
−40 to 100
°C
*
Mounted on a glass epoxy circuit board of 20 mm× 20 mm,
pad dimension of 4 mm× 4 mm.
0.
1SS417CT Datasheet
