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1Z9.1 - SILICON DIFFUSED JUNCTION TYPE ZENER DIODE

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Part number 1Z9.1
Manufacturer Toshiba
File Size 148.12 KB
Description SILICON DIFFUSED JUNCTION TYPE ZENER DIODE
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  • 1Z9.1A - SILICON DIFFUSED JUNCTION TYPE ZENER DIODE

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1Z6.2~1Z390,1Z6.8A~1Z30A TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2~1Z390,1Z6.8A~1Z30A CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS Unit: mm l Average Power Dissipation : P = 1W l Peak Reverse Power Dissipation : PRSM = 200W at tw = 200µs l Zener Voltage : VZ = 6.2 ~ 390V l Tolerance of Zener Voltage 1Z6.2 Series : ±10% 1Z6.8A Series : ±5% l Plastic Mold Package MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Power Dissipation Junction Temperature Storage Temperature Range SYMBOL P Tj Tstg RATING 1 −40~150 −40~150 UNIT W °C °C JEDEC EIAJ TOSHIBA Weight: 0.42g DO−15 SC−39 3−3B1A MARK 1 2001-06-13 1Z6.2~1Z390,1Z6.8A~1Z30A ELECTRICAL CHARACTERISTICS (Ta=25°C) TYPE 1Z6.2 1Z6.8 1Z6.8A 1Z7.5 1Z7.5A 1Z8.2 1Z8.2A 1Z9.1 1Z9.
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