Datasheet Summary
SILICON PNP TRIPLE DIFFUSED TYPE
POWER AMPLIFIER, SWITCHING CIRCUIT AND REGULATOR APPLICATIONS.
Features
. High Gain and Excellent hFE Linearity: hFE=15 (Min.) @ VC E=-2V, I C=-3A
. Low Saturation Voltage: VCE(sat)=-1.0V (Max.)
@ Ic=-4A, I B=-0.4A
Unit in mm
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC a Collector-Base Voltage
- - Collector-Emitter Voltage
38 Emitter-Base Voltage
- - Collector Current
DC Peak
38 Base Current
Collector Power Dissipation JS (Tc=25°C) Derate
Linearly above 25 °C
38 Junction Temperature
38 Storage Temperature Range
SYMBOL RATING
VCBO
-60
VCEO
-60
VEBO
-7 ic
-10
-15
-4
PC 0.86
T...
