Datasheet4U.com

2N3789 - SILICON PNP Transistor

Product Overview

Toshiba

📥 Download Datasheet

2N3789 SILICON PNP Transistor by Toshiba - Datasheet Preview — Datasheet preview – 2N3789

Datasheet Details

Part number	2N3789
Manufacturer	Toshiba
File Size	85.57 KB
Description	SILICON PNP Transistor
Datasheet	2N3789 Datasheet
Additional preview pages of the 2N3789 datasheet.

Product details

Features

. High Gain and Excellent hFE Linearity: hFE=15 (Min. ) @ VC E=-2V, I C=-3A . Low Saturation Voltage: VCE(sat)=-1.0V (Max. ) @ Ic=-4A, I B=-0.4A Unit in mm.

📁 Similar Datasheet

2N3789 - Silicon PNP Power Transistor (Inchange Semiconductor)
2N3789 - PNP POWER TRANSISTORS (Central Semiconductor)
2N3789 - PNP Transistor (Motorola)
2N3789 - Bipolar PNP Device (Seme LAB)
2N3789 - EPITAXIAL-BASE TRANSISTORS (Comset Semiconductor)
2N378 - PNP Transistor (Motorola)
2N3782 - Bipolar PNP Device (Seme LAB)
2N3783 - PNP Transistor (Motorola)

Other Datasheets by Toshiba

2N3713 - GENERAL PURPOSE POWER TRANSISTOR
2N3714 - GENERAL PURPOSE POWER TRANSISTOR
2N3715 - GENERAL PURPOSE POWER TRANSISTOR
2N3716 - GENERAL PURPOSE POWER TRANSISTOR
2N3790 - Silicon PNP Transistor
2N3791 - SILICON PNP Transistor

Published: Aug 12, 2024 |