2N3789 - SILICON PNP Transistor

Toshiba

Key Features

. High Gain and Excellent hFE Linearity: hFE=15 (Min. ) @ VC E=-2V, I C=-3A . Low Saturation Voltage: VCE(sat)=-1.0V (Max. ) @ Ic=-4A, I B=-0.4A Unit in mm.

2N3789 silicon pnp transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2N3789
Manufacturer	Toshiba
File Size	85.57 KB
Description	SILICON PNP Transistor
Datasheet	2N3789 Datasheet

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SILICON PNP TRIPLE DIFFUSED TYPE POWER AMPLIFIER, SWITCHING CIRCUIT AND REGULATOR APPLICATIONS. FEATURES . High Gain and Excellent hFE Linearity: hFE=15 (Min.) @ VC E=-2V, I C=-3A . Low Saturation Voltage: VCE(sat)=-1.0V (Max.) @ Ic=-4A, I B=-0.4A Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC a Collector-Base Voltage *• Collector-Emitter Voltage 38 Emitter-Base Voltage •* Collector Current DC Peak 38 Base Current Collector Power Dissipation JS (Tc=25°C) Derate Linearly above 25 °C 38 Junction Temperature 38 Storage Temperature Range SYMBOL RATING VCBO -60 VCEO -60 VEBO -7 ic -10 ICM -15 IB -4 150 PC 0.86 T J T stg 200 -65-200 UNIT V V V A A A W W/°C °C °C 1. BASE 2.