2N4400
2N4400 is Silicon NPN Transistor manufactured by Toshiba.
:
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS.
Features
. Low Leakage Current
: IcEV=100nA (Max -)' lBEV=-100nA(Max.) @ V CE=35V, VBE=-0.4V
. Excellent DC Current Gain Linearity . Low Saturation Voltage
: VcE(sat)=0-4V(Max.) @ Ic=150mA, lB=15mA . Low Collector Output Capacitance
: C b=6.5pF(Max.) @ V CB=5V . plementary to 2N4402
Unit in mm
1. EMITTER 2. BASE 3. COLLECTOR
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
% Collector-Base Voltage
- Collector-Emitter Voltage
- X- Emitter-Base Voltage
- Collector Current
Base Current
- Collector Power Dissipation
(Ta=25°C) Derate Linearly 25°C
SYMBOL VCBO VCEO VEBO ic...
