2N4400 - Silicon NPN Transistor

Toshiba

Key Features

. Low Leakage Current : IcEV=100nA (Max -)' lBEV=-100nA(Max. ) @ V CE=35V, VBE=-0.4V . Excellent DC Current Gain Linearity . Low Saturation Voltage : VcE(sat)=0-4V(Max. ) @ Ic=150mA, lB=15mA . Low Collector Output Capacitance : C b=6.5pF(Max. ) @ V CB=5V . Complementary to 2N4402 Unit in mm 1.

2N4400 silicon npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2N4400
Manufacturer	Toshiba
File Size	62.45 KB
Description	Silicon NPN Transistor
Datasheet	2N4400 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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: SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2N4400 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES . Low Leakage Current : IcEV=100nA (Max -)' lBEV=-100nA(Max.) @ V CE=35V, VBE=-0.4V . Excellent DC Current Gain Linearity . Low Saturation Voltage : VcE(sat)=0-4V(Max.) @ Ic=150mA, lB=15mA . Low Collector Output Capacitance : C b=6.5pF(Max.) @ V CB=5V . Complementary to 2N4402 Unit in mm 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC % Collector-Base Voltage * Collector-Emitter Voltage •X- Emitter-Base Voltage * Collector Current Base Current * Collector Power Dissipation (Ta=25°C) Derate Linearly 25°C SYMBOL VCBO VCEO VEBO ic IB PC RATING 60 40 6 600 100 350 2.8 *• Collector Power Dissipation 1.