2N4400 Description
SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2N4400 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS.
2N4400 Key Features
- Collector-Emitter Voltage -X- Emitter-Base Voltage
- Collector Current
- Collector Power Dissipation
- Collector Power Dissipation
- Thermal Resistance (Junction to Ambient)
- Thermal Resistance (Junction to Case)
- Storage Temperature Range
- 55-150
- In accordance with JEDEC registration data
- Collector Cut-off Current