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SILICON NPN TRIPLE DIFFUSED TYPE
3
|
2N5039
DC-DC CONVERTER, SWITCHING REGULATOR AND HIGH POWER AMPLIFIER APPLICATIONS.
Unit in mm
FEATURES
. Excellent Switching Times
: t r <0.5AS, tf<0.5>us . Low Saturation Voltage
@ Ic=10A, Ib=1A
: VcE(sat) <2.5V @ Ic=20A, Ir=5A
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
SYMBOL RATING
UNIT
Collector-Base Voltage
VCBO
120
Collector-Emitter Sustaining
Voltage (VBE=-1.5V, RBE= 100Q) VCEX(SUS)
120
Emitter-Base Voltage
VEBO
DC Collector Current
ic
20
Peak
ICM
30
Base Current
IB
Collector Power Dissipation (Tc=25°C)Derate Linearly 25°C PC
Junction Temperature Storage Temperature Range
Tstg
ELECTRICAL CHARACTERISTICS (Ta=25 C)
1A0
u
0.8
w/ c
200
-65~200
1. BASE 2.