• Part: 2SA1120
  • Description: Silicon PNP Transistor
  • Manufacturer: Toshiba
  • Size: 91.41 KB
Download 2SA1120 Datasheet PDF
2SA1120 page 2
Page 2

Datasheet Summary

: , SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBO FLASH APPLICATIONS. AUDIO POWER AMPLIFIER APPLICATIONS. Features - MIN h F E of 70 at-2V, -4A. -5A Rated Collector Current. - MAX V CE ( sat ) of -1.0V at -4A I c . 10W at 25° C Case Temperature. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage SYMBOL VcBO VcEO RATING -35 -20 Emitter-Base Voltage VEBO Collector Current DC _IC_ Pulsed(Note 1) ICP -5 Emitter Current DC IE Pulsed(Note 1) - EP Collector Power Dissipation Ta=25°C Tc=25°C 1.0 10 Junction Temperature Storage Temperature Range u_ L stg 150 -55^150 Note 1. Pulse Test : Pulse Width=10ms (Max. ) Duty Cycle=30%(Max.)...