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SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
1
HIGH CURRENT SWITCHING APPLICATIONS.
INDUSTRIAL APPLICATIONS Unit in mm
FEATURES . Low Collector Saturation Voltage
: VC E(sat)=-0.4V(Max.) (at I C=-3A) . High Speed Switching Time : t s tg=1.0/is(Typ. . Complementary to 2SC3239
MAXIMUM RATINGS (Ta=25 c) CHARACTERISTIC
Collector-Base Voltage
SYMBOL VCBO
RATING
-60
UNIT
ia3MAX.
)Zf3.2i 0.2
1*
t
71^
X <
1
s
to
irf.
1 T"
L.
1.4
+ 0.25 o.7e -ai5
i
1
1.2
CO ' C5
+i
o +o1 H
t
55
S
H
2.54 ± a 25
M2.54±0.85
Collector-Emitter Voltage Emitter-Base Voltage Collector Current
VCEO VEBO ic
-50 -5
C5d
+1
=€I]Blz:_.
Base Current Collector Power Dissipation
(Tc=25°C)
Junction Temperature
IB
-1 25 150
JEDEC
1. BASE 2. COLLECTOR (HEAT SINK) 3.
2SA1279 Datasheet
