2SA1279
2SA1279 is Silicon PNP Transistor manufactured by Toshiba.
FEATURES
. Low Collector Saturation Voltage
: VC E(sat)=-0.4V(Max.) (at I C=-3A) . High Speed Switching Time : t s tg=1.0/is(Typ. . plementary to 2SC3239
MAXIMUM RATINGS (Ta=25 c) CHARACTERISTIC
Collector-Base Voltage
SYMBOL VCBO
RATING
-60
UNIT ia3MAX.
)Zf3.2i 0.2
1- t
71^
X <
1 s to irf.
1 T"
L.
+ 0.25 o.7e -ai5 i
CO ' C5
+i o +o1 H t
2.54 ± a 25
M2.54±0.85
Collector-Emitter Voltage Emitter-Base Voltage Collector Current
VCEO VEBO ic
-50 -5
C5d
+1
=€I]Blz:_.
Base Current Collector Power Dissipation
(Tc=25°C)
Junction Temperature
-1 25 150
JEDEC
1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER
Storage Temperature...
