Toshiba 2SA1802
Silicon PNP Epitaxial Type Transistor
APPLICATIONS
Medium Power AmplifierAPPLICATIONS
2SA1802 Unit: mm● Excellent hFE linearity : hFE (1) = 200 to 600 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 140 (min), 200 (typ.) (VCE = −2 V, IC = −3 A)
● Low collector saturation voltage : VCE (sat) = −0.5 V (max) (IC = −3 A, IB = −60 mA)
● Complementary to 2SC4681
MAXIMUM RATINGS
(Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulsed (Note 1) Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg −30 −30 −10 −6 −3 −6 −0.5 1.0 10 150 −55 to 150 V V V A A W °C °C Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max) JEDEC ― JEITA ― TOSHIBA 2-7B1A Weight: 0.36 g (typ.) 1 2002-08-13ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector...