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2SA1955FV
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1955FV
General Purpose Amplifier Applications Switching and Muting Switch Application
• Low saturation voltage: VCE (sat) (1) = −15 mV (typ.) @IC = −10 mA/IB = −0.5 mA
• Large collector current: IC = −400 mA (max)
Absolute Maximum Ratings (Ta = 25°C)
1.2±0.05 0.8±0.05 0.4 0.4
0.22±0.05
Unit: mm
1.2±0.05 0.8±0.05
1 23
0.32±0.05
Characteristics
Symbol
Rating
Unit
0.13±0.05
0.5±0.05
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
VCBO VCEO VEBO
IC IB PC Tj Tstg
−15 −12 −5 −400 −50 150 * 150 −55~150
V V V mA mA mW °C °C
VESM
JEDEC JEITA
1.BASE 2.EMITTER 3.
2SA1955FV Datasheet
