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TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2215
2SA2215
High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
• High DC current gain: hFE = 200 to 500 (IC = −0.5 A) • Low collector-emitter saturation voltage: VCE (sat) = −0.19 V (max) • High-speed switching: tf = 40 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
2.0±0.1 0.65±0.05
Unit: mm
2.1±0.1 1.7±0.1
0.3-+00..015
1
2
3
0.166±0.05
0.7±0.05
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
−20
V
Collector-emitter voltage
VCEO
−20
V
Emitter-base voltage
VEBO
−7
V
DC
IC
Collector current
Pulse
ICP
−2.5 A
−4.
2SA2215 Datasheet
