Toshiba 2SA562TM
Silicon PNP Transistor
APPLICATIONS
Driver Stage AmplifierAPPLICATIONS
SwitchingAPPLICATIONS
Unit: mm● Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA
● 1 watt amplifier application.
● Complementary to 2SC1959.
MAXIMUM RATINGS
(Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating -35 -30 -5 -500 -100 500 150 -55~150 Unit V V V mA mA mW °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance ICBO VCB = -35 V, IE = 0 IEBO VEB = -5 V, IC = 0 hFE (1) VCE = -1 V, IC = -100 mA (Note) hFE (2) VCE = -6 V, IC = -400 mA (Note) VCE (sat) VBE fT Cob IC = -100 mA, IB = -10 mA VCE = -1 V, IC = -100 mA VCE...