Toshiba 2SA970
Silicon PNP Epitaxial Type Transistor
| Part No. | 2SA970 |
|---|---|
| Datasheet | 2SA970 Download |
| Manufacturer |  Toshiba |
| Description | Silicon PNP Epitaxial Type Transistor |
| Buy | Stock & Price |
APPLICATIONS
● Low noise :NF = 3dB (typ.) RG = 100 Ω, VCE = −6 V, IC = −100 μA, f = 1 kHz : NF = 0.5dB (typ.) RG = 1 kΩ, VCE = −6 V, IC = −100 μA, f = 1 kHz● High DC current gain: hFE = 200~700
● High breakdown voltage: VCEO = −120 V
● Low pulse noise. Low 1/f noise Unit: mm
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg −120 −120 −5 −100 −20 300 125 −55~125 V V V mA mA mW °C °C JEDEC JEITA TO-92 SC-43 Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-5F1B temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 0.21 g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
