2SB502A - SILICON PNP TRANSISTOR

Toshiba

Key Features

:.
Low Saturation Voltage : V CE ( sat )=-l ,5V (Max. ) (l c=-3A).
Complementary to 2SD877.

2SB502A silicon pnp transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SB502A
Manufacturer	Toshiba
File Size	45.54 KB
Description	SILICON PNP TRANSISTOR
Datasheet	2SB502A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SILICON PNP TRIPLE DIFFUSED MESA TYPE A AUDIO POWER AMPLIFIER APPLICATIONS. REGULATOR APPLICATIONS. FEATURES : • Low Saturation Voltage : V CE ( sat )=-l ,5V (Max. ) (l c=-3A) • Complementary to 2SD877. INDUSTRIAL APPLICATIONS Unit in mm 01 §7 MAX. MAXIMUM RATINGS (Ta = 25 °c) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base 2SB502A Voltage 2SB503A Collector-Emitter 2SB502A Voltage " 2SB503A Emitter-Base Voltage Collector Current Emitter Current Collector Power Ta=25°C Dissipation Tc=25°C Junction Temperature 'CBO 'CEO 'EBO IE -110 -80 -80 -50 -10 -3 1.5 25 150 1. BA S E 2. EMITTER COLLECTOR (CAS E) TOSHIBA TO-66 TC-16A, TB- 23 2-13A1 Storage Temperature Range stg ELECTRICAL CHARACTERISTICS (Ta = 25°C) -65 * 150 C [Mounting kit No.AC74 Weight : 5.