2SB992 - SILICON PNP TRANSISTOR

Toshiba

Key Features

. High Collector Current : Ic=-7A . Low Collector Saturation Voltage : V CE ( sat )=-0.5V(Max. ) (at I C=-4A) . High Collector Power Dissipation : Pc=40W (at Tc=25°C) . Complementary to 2SD1362.

2SB992 silicon pnp transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SB992
Manufacturer	Toshiba
File Size	131.12 KB
Description	SILICON PNP TRANSISTOR
Datasheet	2SB992 Datasheet

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2SB992 SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. FEATURES . High Collector Current : Ic=-7A . Low Collector Saturation Voltage : V CE ( sat )=-0.5V(Max.) (at I C=-4A) . High Collector Power Dissipation : Pc=40W (at Tc=25°C) . Complementary to 2SD1362 INDUSTRIAL APPLICATIONS Unit in mm 1CX3MAX. 03.2±O.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Ta=25°C Tc=25 C VCBO VcEO VEBO ic IB PC Junction Temperature Storage Temperature Range Lstg_ ELECTRICAL CHARACTERISTICS (Ta=25°C) RATING -100 -80 -5 -7 UNIT 1.5 40 150 -55-150 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER EI A.