• Part: 2SB992
  • Description: SILICON PNP TRANSISTOR
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 131.12 KB
Download 2SB992 Datasheet PDF
Toshiba
2SB992
2SB992 is SILICON PNP TRANSISTOR manufactured by Toshiba.
FEATURES . High Collector Current : Ic=-7A . Low Collector Saturation Voltage : V CE ( sat )=-0.5V(Max.) (at I C=-4A) . High Collector Power Dissipation : Pc=40W (at Tc=25°C) . plementary to 2SD1362 INDUSTRIAL APPLICATIONS Unit in mm 1CX3MAX. 03.2±O.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Ta=25°C Tc=25 C VCBO Vc EO VEBO ic IB Junction Temperature Storage Temperature Range Lstg_ ELECTRICAL CHARACTERISTICS (Ta=25°C) RATING -100 -80 -5 -7 UNIT 1.5 40 -55-150 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER EI A. TOSHIBA Weight : 2 0g 2-10K1A CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage SYMBOL ICBO l EBO TEST CONDITION VCB=-100V, I E=0 V...