2SB995 - SILICON PNP TRANSISTOR

Toshiba

Key Features

. High Breakdown Voltage : VCEq=-100V . Low Collector-Emitter Saturation Voltage : V C E(sat)=-2.0V(Max. ) . Complementary to 2SD1355 . Recommended for 30W High-Fidelity Audio Frequency Amplifier Output Stage. Unit in mm.

2SB995 silicon pnp transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SB995
Manufacturer	Toshiba
File Size	85.74 KB
Description	SILICON PNP TRANSISTOR
Datasheet	2SB995 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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: 2SB995 SILICON PIMP TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS. FEATURES . High Breakdown Voltage : VCEq=-100V . Low Collector-Emitter Saturation Voltage : V C E(sat)=-2.0V(Max.) . Complementary to 2SD1355 . Recommended for 30W High-Fidelity Audio Frequency Amplifier Output Stage. Unit in mm MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL VCBO v CEO VEBO ic IB PC Lstg RATING -100 -100 -5 -5 -0.5 UNIT 40 150 -55-150 1. BASE 2. COLLECTOR (HEAT SINK) a EMITTER TOSHIBA 2-10K1A Weight : 2.