2SB995
2SB995 is SILICON PNP TRANSISTOR manufactured by Toshiba.
FEATURES
. High Breakdown Voltage : VCEq=-100V . Low Collector-Emitter Saturation Voltage
: V C E(sat)=-2.0V(Max.) . plementary to 2SD1355 . Remended for 30W High-Fidelity Audio Frequency
Amplifier Output Stage.
Unit in mm
MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation
(Tc=25°C) Junction Temperature Storage Temperature Range
SYMBOL VCBO v CEO VEBO ic IB PC
Lstg
RATING -100 -100 -5 -5 -0.5
UNIT
-55-150
1. BASE 2. COLLECTOR (HEAT SINK) a EMITTER
TOSHIBA
2-10K1A
Weight : 2.1
ELECTRICAL CHARCTERISTICS (Ta=25 C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance
ICBO l...
