Toshiba 2SC1001
SILICON NPN TRANSISTOR
| Part No. | 2SC1001 |
|---|---|
| Datasheet | 2SC1001 Download |
| Manufacturer |  Toshiba |
| Description | SILICON NPN TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
. Output Power : P =l. 2W(Min. (f=470MHz, VCC=12.6V, I»i=0.3W) Unit in mm 09.39 MAX. 8.4 5 MAX r -j 13 Xr < ar^ d to - «jMAXIMUM RATINGS
(Ta=25°C) 00.45 j 05.08 ao 0$ H CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL VcBO VCEO v EBO ic PC T J Tstg RATING 40 20 4 0.5 5 175 -65 -175 UNIT V V V A W °C °c [\ 3 ^I l^jL JJ 45A /% V^ °/ 1. EMITTER ( CASE) 2. BASE 3. COLLECTOR JEDEC TO - 39 EIAJ TO - 5 , TB - 5B TOSHIBA 2 - 8B1B Weight : 1.2gELECTRICAL CHARACTERISTICS
(Ta=25°C) CHARACTERISTIC Collector Cut-off Current Collector-Base Breakdown Voltage SYMBOL TEST CONDITION TCBO V CB =15V, I E=0 v (BR)CB0 I C =lmA, I E=0 MIN. - 40 TYP. - - MAX. UNIT 1 yA -V Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage v (B