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SILICON NPN EPITAXIAL PLANAR TYPE
UHF BAND POWER AMPLIFIER APPLICATIONS
FEATURES . Output Power : P =l. 2W(Min.
(f=470MHz, VCC=12.6V, I»i=0.3W)
Unit in mm
09.39 MAX.
8.4 5 MAX r -j
13
Xr < ar^ d to
- «j
MAXIMUM RATINGS (Ta=25°C)
00.45
j
05.08
ao
0$
H
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation
(Tc=25°C) Junction Temperature Storage Temperature Range
SYMBOL VcBO VCEO v EBO ic PC
T
J
Tstg
RATING 40 20
4
0.5
5
175 -65 -175
UNIT V V V A W
°C °c
[ 3
^I
l^jL JJ
45A /% V^
°/ 1. EMITTER ( CASE) 2. BASE 3. COLLECTOR
JEDEC
TO - 39
EIAJ
TO - 5 , TB - 5B
TOSHIBA
2 - 8B1B
Weight : 1.
2SC1001 Datasheet
