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2SC1380A - SILICON NPN TRANSISTOR

Download the 2SC1380A datasheet PDF. This datasheet also covers the 2SC1380 variant, as both devices belong to the same silicon npn transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High Breakdown Voltage : V c -g =50v . High DC Current Gain : 1^=200^700.
  • Low Noise Figure : NF=2dB(Max. ) (2SC1380A) at Rg =10kn, f=100Hz.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SC1380-Toshiba.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2SC1380A
Manufacturer Toshiba
File Size 31.65 KB
Description SILICON NPN TRANSISTOR
Datasheet download datasheet 2SC1380A Datasheet

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Other Datasheets by Toshiba

Part Number Description
2SC1380 SILICON NPN TRANSISTOR
2SC1000 Silicon NPN Transistor
2SC1001 SILICON NPN TRANSISTOR
2SC108A Silicon NPN Epitaxial Type Transistor
2SC109A Silicon NPN Epitaxial Type Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
: 2SC1380 2SC1380A SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (INDUSTRIAL APPLICATIONS) HIGH FREQUENCY AMPLIFIER APPLICATIONS. LOW NOISE AUDIO AMPLIFIER APPLICATIONS. (2SC1380A) Unit in mm 5.8 MAX 04.95 MAX. FEATURES • High Breakdown Voltage : V c -g =50v . High DC Current Gain : 1^=200^700 • Low Noise Figure : NF=2dB(Max. ) (2SC1380A) at Rg =10kn, f=100Hz MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO V CEO V EBO lC h PC T J T stg RATING 55 50 5 100 20 200 150 -55M.50 UNIT V V V mA mA mW °C °C 1. EMITTER 2. BASE 3. COLLECTOR (CASE) JEDEC EIAJ TOSHIBA TO-18 TC-7, TB-8C 2-5A1B Weight : 0.