• Part: 2SC1569
  • Description: Silicon NPN Transistor
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 85.41 KB
Download 2SC1569 Datasheet PDF
Toshiba
2SC1569
FEATURES - High Voltage : VCEO=300V - Small Collector Output Capacitance : Cob=5 . Op F(Typ. - High Transition Frequency : f T=100MHz (Typ.) Unit in mm 10.3MAX, 03.6±O.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Ta=25°C Tc=25°C Junction" Temperature Storage Temperature Range SYMBOL VCBO v CEO VEBO ic IE RATING 300 300 150 -150 T.1 T stg 1.5 12.5 150 -55^150 UNIT V V V m A m A °C °C 1. BASE 2. COLLECTOR(HEAT SINK) 3. EMITTER - 220AB Mounting kit No. AC75 Weight : 1.9g ELECTRICAL CHARACTERISTICS CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector- Emitter Breakdown Voltage (Ta=25°C) SYMBOL I CB0 l EBO TEST CONDITION VCB=100V, IE=0 VEB=5V, lc=0 V (BR) CEO I(-.=5m A, lg=0 DC Current Gain Collector- Emitter Saturation Voltage Base- Emitter Saturation Voltage h FE v CE(sat) VCE=10V, I c=50m A I c=100m A, I B=20m A...