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SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
MEDIUM POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS.
FEATURES • High Breakdown Voltage : VCEO=80V Complementary to 2SA816.
Unit in mm
10.3 MAX 0Z.6 ±0.2
MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL RAINGS
VCBO v CEO Vebo ic IE PC
T.1
Tste
80 80
5
750 -750
1.5 150 -55M.50
UNIT
V V V mA mA W °C °C
1. BASE Z. COLLECTOR (HEAT SINK) 3. EMITTER
JEDEC
TO -230AB
EIAJ TOSHIBA
SC -46
2-10A1A
Mounting Kit NO. AC75 Weight : 1 .
2SC1626 Datasheet
