The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SILICON NPN EPITAXIAL PLANAR TYPE
27 MHz POWER AMPLIFIER APPLICATIONS.
FEATURES • Recommended for Output Stage Application of AM 4W Transmitter. • High Power Gain.
Unit in mm
10.3
MA%, ,
03.6±O.2
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage
RRF.=10fi
Emitter-Base Voltage Collector Current Base Current Emitter Current Collector Power Dissipation
( Tc-25°C ) Junction Temperature Storage Temperature Range
ELECTRICAL CHARACTERISTICS CHARACTERISTIC
SYMBOL RATING UNIT
2.54
2.54
v CBO
65
V
V CER
65
V
Vebo
4.0
V
1 23 to
ic
3
A
Ik
0.4
A
IE
-3
A
1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER
pc
10
W
T.i
150
°C
Tstg -55 ^ 150 °C
T0-220AB
EIAJ
TOSHIBA
2 -10A1A
Mounting Kit No, AC75
Weight : 1.
2SC1678 Datasheet
