Toshiba 2SC1923
Silicon NPN Transistor
| Part No. | 2SC1923 |
|---|---|
| Datasheet | 2SC1923 Download |
| Manufacturer |  Toshiba |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
APPLICATIONS
FM, RF, MIX, IF AmplifierAPPLICATIONS
Unit: mm● Small reverse transfer capacitance: Cre = 0.7 pF (typ.)
● Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz)
MAXIMUM RATINGS
(Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 40 30 4 20 4 100 125 -55~125 Unit V V V mA mA mW °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1B Weight: 0.21 g (typ.) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current DC current gain Reverse transfer capacitance Transition frequency Collector-base time constant Noise figure Power gain ICBO IEBO VCB = 18 V, IE = 0 VEB = 4 V, IC = 0 hFE VCE = 6 V, IC = 1 mA (Note) Cre fT Cc･rbb’ NF Gpe VCE = 6 V, f = 1 MHz VCE = 6 V, IC = 1 mA VCE = 6 V, IE = -1 mA, f = 30 MHz VCE = 6 V, IE = -1 mA, f = 100 MHz, Figure 1 Note: hFE classification R: 40~80, O: 70~140, Y: 100~200 (* NF = 5.0dB max) Min Typ.
