• Part: 2SC2101
  • Description: Silicon NPN POWER TRANSISTOR
  • Manufacturer: Toshiba
  • Size: 61.72 KB
Download 2SC2101 Datasheet PDF
2SC2101 page 2
Page 2

Datasheet Summary

SILICON NPN EPITAXIAL PLANAR TYPE VHF BAND POWER AMPLIFIER APPLICATIONS. Features : . Output Power : P =6W (Min.) ( f=175MHz, VCC=12.5V, Pi=0.5W ) Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC ?C Tstg ELECTRICAL CHARACTERISTICS (T a=25 °C) CHARACTERISTIC SYMBOL Collector Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage ICBO V (BR)CBO V(BR)CEO v (BR)EBO DC Current Gain hFE Collector Output...