Datasheet Summary
SILICON NPN EPITAXIAL PLANAR TYPE
VHF BAND POWER AMPLIFIER APPLICATIONS.
Features
: . Output Power : P o =40W (Min.)
( f=175MHz, VCC =13.5V, P-j=10W ) . 100% Tested for Load Mismatch Stress at All Phase
Angles with 30:1 VSWR @ Vcc=13.5V, Pi=10W, f=175MHz
2-J2fc.2±Ql
Unit in mm
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation
(Tc=25 °C) Junction Temperature
Storage Temperature Range
SYMBOL VCBO VCEO VEBO ic PC
L stg
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Collector-Base Breakdown Voltage
ICBO V(BR)CB0
Collector-Emitter...
