2SC2181 - SILICON NPN TRANSISTOR

Toshiba

Key Features

: . Output Power : P o =40W (Min. ) ( f=175MHz, VCC =13.5V, P-j=10W ) . 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ Vcc=13.5V, Pi=10W, f=175MHz 2-J2fc.2±Ql Unit in mm.

2SC2181 silicon npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SC2181
Manufacturer	Toshiba
File Size	65.53 KB
Description	SILICON NPN TRANSISTOR
Datasheet	2SC2181 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SILICON NPN EPITAXIAL PLANAR TYPE VHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : P o =40W (Min.) ( f=175MHz, VCC =13.5V, P-j=10W ) . 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ Vcc=13.5V, Pi=10W, f=175MHz 2-J2fc.