2SC2215 Overview
SILICON NPN PLANAR TYPE TV 1ST, 2ND PICTURE IF AMPLIFIER APPLICATIONS. FEATURES High Gain : Gpe =35dB (Typ.) (f=45MHz) Excellent Forward AGC Characteristics. 2SC2215 Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO v CEO vEBO ic IE
2SC2215 Key Features
- High Gain : Gpe =35dB (Typ.) (f=45MHz) - Excellent Forward AGC Characteristics
- 55^125 °C
- 10.8 mA
- >2^ -fop
- 20 -25 -30 -35 -40 -45
2SC2215 Applications
- High Gain : Gpe =35dB (Typ.) (f=45MHz) - Excellent Forward AGC Characteristics
- 55^125 °C
- 10.8 mA
- >2^ -fop
- 20 -25 -30 -35 -40 -45