2SC2215 - SILICON NPN TRANSISTOR

Toshiba

Key Features

High Gain : Gpe =35dB (Typ. ) (f=45MHz).
Excellent Forward AGC Characteristics. 2SC2215 Unit in mm.

2SC2215 silicon npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SC2215
Manufacturer	Toshiba
File Size	102.24 KB
Description	SILICON NPN TRANSISTOR
Datasheet	2SC2215 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SILICON NPN PLANAR TYPE TV 1ST, 2ND PICTURE IF AMPLIFIER APPLICATIONS. FEATURES • High Gain : Gpe =35dB (Typ.) (f=45MHz) • Excellent Forward AGC Characteristics. 2SC2215 Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO v CEO vEBO ic IE ?C T J T stg RATING 40 UNIT V 40 V 4 V 50 mA -50 mA 250 mW 125 °C -55^125 °C 1. BASS 2. EMITTER a COLLECTOR TO 92 43 2 — 5P IE Weight : 0.21g ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC Collector Cut-off Current SYMBOL L CBO TEST CONDITION VCB=40V, IE=0 MIN. TYP. MAX. UNIT 0.