• Part: 2SC2215
  • Description: SILICON NPN TRANSISTOR
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 102.24 KB
Download 2SC2215 Datasheet PDF
Toshiba
2SC2215
FEATURES - High Gain : Gpe =35d B (Typ.) (f=45MHz) - Excellent Forward AGC Characteristics. Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO v CEO v EBO ic IE ?C T T stg RATING 40 UNIT V 50 m A -50 m A 250 m W °C -55^125 °C 1. BASS 2. EMITTER a COLLECTOR TO 92 - 5P IE Weight : 0.21g ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC Collector Cut-off Current SYMBOL L CBO TEST CONDITION VCB=40V, IE=0 MIN. TYP. MAX. UNIT 0.1 y A Emitter Cut-off Current I EBO VEB=3V, Ic-0 Collector- Emitter Breakdown Voltage v (BR) CEO Ic=3m A, lg=0 DC Current Gain J FE VCE=10V, I c=4m...