• Part: 2SC2270
  • Description: Silicon NPN Transistor
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 87.95 KB
Download 2SC2270 Datasheet PDF
Toshiba
2SC2270
FEATURES - High DC Current Gain : h FE=140^450 (V CE=2V, I C=0.5A) h FE=70 (Min.)(VCE=2V, I C=4A) - Low Saturation Voltage : v CE(sat) =1 - 0V (Max -) (Ic=4A » Ib =0 - 1A ) - High Collector Power Dissipation : P C=10W (Tc=25°C), Pc-l.OW (Ta=25°C) MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Pulsed (Note 1) Emitter Current DC Pulsed (Note 1) Collector Power Ta=25°C Dissipation Tc=25°C Junction Temperature Storage Temperature Range Note 1 : Pulse Test : Pulse Width = 10ms (Max.) Duty Cycle = 30 % (Max.) SYMBOL VCBO VCES VCEO vebo ic I CP IE X EP pc Tj Tstg RATING 50 40 20 8 5 -5 -8 1.0 10 150 -55^150 UNIT V V °c °C Unit in mm 3.1:-_0.15 i^ 1. EMITTER 2. COLLECTOR (HEAT SINf C 3. BASE TO-126 TOSHIBA Mounting Kit No. AC46C Weight :...