2SC2420 - Silicon NPN Transistor

Toshiba

Key Features

: . Output Power : P =32W (Min. ) ( f=175MHz, VCC=13.5V, Pi=4W ) 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ Vcc=14.5V, Pi=4W, f=175MHz Unit in mm.

2SC2420 silicon npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SC2420
Manufacturer	Toshiba
File Size	60.22 KB
Description	Silicon NPN Transistor
Datasheet	2SC2420 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SILICON NPN EPITAXIAL PLANAR TYPE VHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : P =32W (Min.) ( f=175MHz, VCC=13.5V, Pi=4W ) 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ Vcc=14.5V, Pi=4W, f=175MHz Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 40 Collector-Emitter Voltage VCEO 18 Emitter-Base Voltage VEBO Collector Current ic Collector Power Dissipation 7fl (Tc=25°C) 1. EMITTER 2. BASE 3. EMITTER 4. COLLECTOR Junction Temperature Storage Temperature Range stg ELECTRICAL CHARACTERISTICS (Tc=25°C) 175 -65-175 TOSHIBA z-ioaiA Mounting Kit No. AC57 Weight : 3.