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SILICON NPN EPITAXIAL PLANAR TYPE
VHF BAND POWER AMPLIFIER APPLICATIONS.
FEATURES : . Output Power : P =27W (Min.)
( f=l 75MHz, VCC=12.5V, P±=4.2W )
Unit in mm
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation
(Tc=25 °C) Junction Temperature Storage Temperature Range
SYMBOL VCBO VCEO v EBO ic PC
L stg
ELECTRICAL CHARACTERISTICS (T a=25°C)
RATING 40 18
UNIT
50
175
65-175
1. EMITTER Z. BASE 3. EMITTER 4. COLLECTOR
JEDEC EIAJ TOSHIBA
2-10H1A
Weight
4.
2SC2508 Datasheet
