Toshiba 2SC2553
Silicon NPN Transistor
| Part No. | 2SC2553 |
|---|---|
| Datasheet | 2SC2553 Download |
| Manufacturer |  Toshiba |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
APPLICATIONS
. HIGH SPEED DC-DC CONVERTER APPLICATION. INDUSTRIALAPPLICATIONS
Unit in mm 10.3MAX.. . 03.6±O-2FEATURES
: . Excellent Switching Times : t r =1.0/is(Max.), tf=1.0/is(Max. ) at I C=4A . High Collector Breakdown Voltage : V CEo=400VMAXIMUM RATINGS
(Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Ta=25°C Tc=25°C Junction Temperature Storage Temperature Range V CBO 'CEO ^EBO L stgELECTRICAL CHARACTERISTICS
(Ta=25°C) CHARACTERISTIC SYMBOL Collector Cut-off Current ICBO Emitter Cut-off Current lEBO 500 V 400 1.5 40 150 -55-150 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER JEDEC TO-220AB EI A J OC TOSH IBA SC -4 6 2- 10 A1A Mounting kit No. AC75 Weight :1.9g TEST CONDITION MIN. TYP. MAX. UNIT V rR=400V, Ie=0 V EB=7V, I C=0 100 mA Collector-Base Breakdown Voltage V (BR) CBO I c=lmA, Ie=0 500 Collector-Emitter Breakdown Voltage V (BR) CEO I c=10mA, I B=0 400 D...
