Toshiba 2SC2715
Silicon NPN Transistor
| Part No. | 2SC2715 |
|---|---|
| Datasheet | 2SC2715 Download |
| Manufacturer |  Toshiba |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
APPLICATIONS
Unit: mm● High power gain: Gpe = 2dB (typ.) (f = 10.7 MHz)
● Recommended for FM IF, OSC stage and AM CONV. IF stage.
MAXIMUM RATINGS
(Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 35 30 4 50 10 150 125 -55~125 Unit V V V mA mA mW °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) JEDEC ― JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012 g (typ.) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Collector-base time constant Power gain ICBO VCB = 35 V, IE = 0 IEBO VEB = 4 V, IC = 0 hFE (Note) VCE = 12 V, IC = 2 mA VCE (sat) VBE IC = 10 mA, IB = 1 mA IC = 10 mA, IB = 1 mA fT Cob Cc･rbb’ Gpe VCE = 10 V, IC = 1 mA VCB = 10 V, IE = 0,...
