2SC2868 - Silicon NPN Transistor

Toshiba

Key Features

. High Breakdown Voltage : Vceo= 80V . Low Noise Figure : NF=ldB (Typ . ) , 10dB(Max. ) . Excellent hFE Linearity: hFE(0.1mA)/hFE(2mA)=0.90(Typ,.
Complementary to 2SA1158. _&1MAX. Unit in mm.

2SC2868 silicon npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SC2868
Manufacturer	Toshiba
File Size	99.69 KB
Description	Silicon NPN Transistor
Datasheet	2SC2868 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SC2B68 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. FEATURES . High Breakdown Voltage : Vceo= 80V . Low Noise Figure : NF=ldB (Typ . ) , 10dB(Max.) . Excellent hFE Linearity: hFE(0.1mA)/hFE(2mA)=0.90(Typ, • Complementary to 2SA1158. _&1MAX. Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL RATING VCBO 80 VCEO 80 VEBO ic 100 IB 50 PC 400 ^stg 125 -55-125 UNIT 1.27 to * d 1.27 1. EMITTER 2. COLLECTOR a BASE mA mA EIAJ mW TOSHIBA SC—4 3 2-5P1B Weight : 0.