Toshiba 2SC2880
Silicon NPN Triple Diffused TRANSISTOR
| Part No. | 2SC2880 |
|---|---|
| Datasheet | 2SC2880 Download |
| Manufacturer |  Toshiba |
| Description | Silicon NPN Triple Diffused TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
● High voltage: VCEO = 150 V● High transition frequency: fT = 120 MHz
● Small flat package
● PC = 1.0 to 2.0 W (mounted on ceramic substrate)
● Complementary to 2SA1200
MAXIMUM RATINGS
(Ta = 25°C) Characteristics Symbol Rating Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation VCBO VCEO VEBO IC IB PC PC (Note 1) 200 150 5 50 10 500 800 Junction temperature Storage temperature range Tj 150 Tstg −55 to 150 Note 1: Mounted on ceramic substrate (250 mm2 × 0.8 t) Unit V V V mA mA mW °C °C Unit: mm PW-MINI JEDEC ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.05 g (typ.) 1 2002-08-13ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance ICBO IEBO VCB = 200 V, IE = 0 VEB = 5 V, IC = 0 hFE (Note 2) VCE = 5 V, IC = 10 m...
