Toshiba 2SC2913
Silicon NPN Transistor
APPLICATIONS
. HIGH SPEED DC-DC CONVERTER APP ^ICATION.FEATURES
. Excellent Switching Times INDUSTRIALAPPLICATIONS
Unit in mm jzfiaatai >< +U.1Z < ~< m 0141) -0.10 >< < s as : t r =1.0/is(Max.), tf=l. 0/*s (Max. ) at Ic=4A . High Collector Breakdown Voltage : VCEO=400VMAXIMUM RATINGS
(Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL VcBO v CF,0 v EBO ic Ifi pc T J T stg RATING 500 400 7 7 2 40 150 -65-150 UNIT V V V A A W OC °C 9-fi.o±ao5 || 24.38±0.05 I4.7±G5 +1 O C) ^ 3 .@_j 'J iH^% iri t- , H 32MAX- 2. EMITTER COLLECTOR (GAS E) J ED EC EIAJ TOSHIBA - — 2— 14A1AELECTRICAL CHARACTERISTICS
(T a=25°C) CHARACTERISTIC SYMBOL TEST CONDITION Mounting kit No. AC7' Weight : 7.6g MIN. TYP.