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2SC2982 Datasheet PDF

Toshiba 2SC2982

Silicon NPN Transistor

Part No. 2SC2982
Datasheet 2SC2982 Download
Manufacturer
Toshiba
Description Silicon NPN Transistor
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2SC2982 datasheet page 1 preview

APPLICATIONS

Medium Power Amplifier

APPLICATIONS

2SC2982 Unit: mm
● High DC current gain and excellent linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 140 (typ.), (VCE = 1 V, IC = 2 A)
● Low saturation voltage : VCE (sat) = 0.5 V (max) (IC = 2 A, IB = 50 mA)
● Small flat package
● PC = 1.0 to 2.0 W (mounted on a ceramic substrate)
● Complementary to 2SA1314

MAXIMUM RATINGS

(Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse (Note 1) Base current DC Pulse (Note 1) Collector power dissipation Junction temperature Storage temperature range VCBO VCES VCEO VEBO IC ICP IB IBP PC PC (Note 2) Tj Tstg 30 30 10 6 2 4 0.4 0.8 500 1000 150 −55 to 150 V V V A A mW °C °C Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max) Note 2: 2SC2982 mounted on a ceramic substrate (250 mm2 × 0.8 t) JEDEC ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.05 g (typ.) 1 2004-07-07 2SC2982

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Characteristics Symbol Test Condition Min Typ.
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