Toshiba 2SC2995
Silicon NPN Epitaxial Type TRANSISTOR
| Part No. | 2SC2995 |
|---|---|
| Datasheet | 2SC2995 Download |
| Manufacturer |  Toshiba |
| Description | Silicon NPN Epitaxial Type TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
2SC2995 Unit: mm● High stability oscillation voltage on FM local oscillator.
● Recommend FM/AM RF, MIX, OSC and IF.
MAXIMUM RATINGS
(Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 40 30 4 50 10 200 125 -55~125 Unit V V V mA mA mW °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-4E1A Weight: 0.13 g (typ.) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current DC current gain Reverse transfer capacitance Transition frequency Collector-base time constant Noise figure Power gain Oscillation output voltage ICBO VCB = 40 V, IE = 0 IEBO VEB = 4 V, IC = 0 hFE (Note) VCE = 6 V, IC = 1 mA Cre fT Cc･rbb’ NF Gpe VOSC VCE = 6 V, f = 1 MHz VCE = 6 V, IE = -1 mA VCB = 6 V, IE = -1 mA, f = 30 MHz VCC = 6 V, IE = -1 mA, f = 100 MHz (Figure 1) VCC = 6 V, f = 100 MHz (Figure 2) Note: hFE classification R: 40~80, O: 70~140, Y: 120~240 Min Typ.
