2SC3007 - Silicon NPN Transistor

Toshiba

Key Features

. Low Collector Saturation Voltage : VC E(sat)=0.5V(Max. ) at I C=1A . High Speed Switching Time : t s tg=l - O^ts (Typ . ).

2SC3007 silicon npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SC3007
Manufacturer	Toshiba
File Size	110.85 KB
Description	Silicon NPN Transistor
Datasheet	2SC3007 Datasheet

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SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES . Low Collector Saturation Voltage : VC E(sat)=0.5V(Max.) at I C=1A . High Speed Switching Time : t s tg=l - O^ts (Typ . ) INDUSTRIAL APPLICATIONS Unit in mm 09.3 9 MAX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO ic IB PC T J T stg ELECTRICAL CHARACTERISTICS (Ta =25°C) CHARACTERISTIC SYMBOL Collector Cut-off Current ICBO Emitter Cut-off Current Collector-Emitter Breakdown Voltage lEBO V (BR) CEO RATING 50 50 5 2 0.2 800 .