Toshiba 2SC3072
Silicon NPN Transistor
| Part No. | 2SC3072 |
|---|---|
| Datasheet | 2SC3072 Download |
| Manufacturer |  Toshiba |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
APPLICATIONS
Medium Power AmplifierAPPLICATIONS
2SC3072 Unit: mm● High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A)
● Low collector saturation voltage : VCE (sat) = 1.0 V (max) (IC = 4 A, IB = 0.1 A)
● High power dissipation : PC = 10 W (Tc = 25°C), PC = 1.0 W (Ta = 25°C)
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse (Note 1) Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg 50 V 40 V 20 8 V 5 A 8 0.5 A 1.0 W 10 150 °C −55 to 150 °C JEDEC ― JEITA ― TOSHIBA 2-7J1A Weight: 0.36 g (typ.) Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause t...
