Toshiba 2SC3124
Silicon NPN Transistor
| Part No. | 2SC3124 |
|---|---|
| Datasheet | 2SC3124 Download |
| Manufacturer |  Toshiba |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
APPLICATIONS
MAXIMUM RATINGS
(Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 30 15 3 50 25 150 125 -55~125 Unit V V V mA mA mW °C °C 2SC3124 Unit: mmELECTRICAL CHARACTERISTICS
(Ta = 25°C) JEDEC ― JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012 g (typ.) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Transition frequency Collector output capacitance Collector-base time constant Symbol Test Condition ICBO IEBO V (BR) CEO hFE fT Cob Cc･rbb’ VCB = 15 V, IE = 0 VEB = 3 V, IC = 0 IC = 1 mA, IB = 0 VCE = 3 V, IC = 8 mA VCE = 10 V, IC = 8 mA VCB = 10 V, IE = 0, f = 1 MHz VCB = 10 V, IC = 8 mA, f = 30 MHz Min Typ. Max Unit ¾ ¾ 0.1 mA ¾ ¾ 1.0 mA 15 ¾ ¾ V 40 100 200 650 1100 ¾ MHz ¾ 0.9 1.3 pF ¾ 7 12 ps Marking 1 2003-03-19 2SC3124 2 2...
