Toshiba 2SC3225
Silicon NPN TRANSISTOR
| Part No. | 2SC3225 |
|---|---|
| Datasheet | 2SC3225 Download |
| Manufacturer |  Toshiba |
| Description | Silicon NPN TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
Solenoid DriveAPPLICATIONS
IndustrialAPPLICATIONS
Unit: mm● High DC current gain: hFE = 500 (min) (IC = 400 mA)
● Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)
MAXIMUM RATINGS
(Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 40 40 7 2 0.5 900 150 −55 to 150 Unit V V V A A mW °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) JEDEC TO-92MOD JEITA ― TOSHIBA 2-5J1A Weight: 0.36 g (typ.) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Symbol Test Condition ICBO IEBO V (BR) CEO hFE VCE (sat) VBE (sat) fT Cob VCB = 40 V, IE = 0 VEB = 7 V, IC = 0 IC = 10 mA, IB = 0 VCE = 1 V, IC = 400 mA IC = 300 mA, IB = 1 mA IC = 300 mA, IB = 1 mA VCB = 2 V, IC = 100 mA VCB = 10 V, IB = 0, f = 1 MHz Min Typ.
